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Plasma Enhanced Chemical Vapor Deposition (PE-CVD) |
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BMR Technology Co. |
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HiDep-SC |
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Standard process : SiO2, SiN, SiON, Amorphous-Si
Process Temperature : 50 ~ 300¡É
Base Presuure : under 5E-6Torr
Wafer size : up to 8inch wafer
Gases : SiH4, N2, O2, H2, He, CF4, Ar |
Ȱ¿ëºÐ¾ß |
SiO2 :high depositon rate at relatively low temperatures excellent breakdown characteristics.
hard mask, insulator, final passivation
SiN : high dielectric constant(as compared to that of silicn dioxide) imperviousness to water vapor and ion diffusion radiation shielding
etch stop materials, spacers for the suicide materials, dielectric layer |
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C5 329È£
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C5 329È£
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C5 720-1È£
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TEMESCAL/BOC COATING TECH |
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Atomic-Basic |
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Telemark |
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246-28 |
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°íºÐÇØ´É À¯µµ °áÇÕ ÇöóÁ Áú·®ºÐ¼®±â(High Resolution Inductively Coupled Plasma Mass Spectrometer (HR-ICP-MS)) |
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Optima 8300 |
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iCAP 7000 Series |
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ÇöóÁ ¿øÀÚÃþ ÁõÂø ½Ã½ºÅÛ(Plasma Enhanced Atomic Layer Deposition (PE-ALD) System) |
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ForALL |
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OZONE |
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ÆÞ½º ·¹ÀÌÀú ÁõÂø ½Ã½ºÅÛ(Pulsed Laser Deposition (PLD) System) |
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HIGGSLAB |
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ÆÞ½º ·¹ÀÌÀú ÁõÂø ½Ã½ºÅÛ(Pulsed Laser Deposition (PLD) System) |
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COHERENT |
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COMPex Pro 102 F |
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X-¼±±¤ÀüÀںб¤ºÐ¼®±â(XPS xonnectable Deposition system) |
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ULVAC-PHI, Inc. |
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PHI GENESIS Multi-tech Scanning XPS |
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DDONG High Technologies |
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Thermal Evaporator System |
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Jusung Eng. |
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Watkins Johnson |
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TES |
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TELIA200 |
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Korea Vacuum Tech |
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KVPED-T0583 |
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Korea Vacuum Tech |
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KVICP-T406530 |
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Áø°ø ¿ÁõÂø ½Ã½ºÅÛ(Thermal Evaporating System) |
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GD-Tech |
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KVT-2008L |
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À¯µµ °áÇÕ ÇöóÁ Áú·®ºÐ¼®±â(Inductively Coupled Plasma Mass Spectrometer (ICP-MS)) |
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PerkinElmer |
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NexION-300D |
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Thermo Scientific |
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iCAP 6500 DUO |
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Àü±âÈÇÐ ºÐ¼®±â(Electrochemical Analyzer System) |
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Advanced Measurement Technology |
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2101A |
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´ÙÁß°ËÃâ À¯µµ°áÇÕÇöóÁ Áú·®ºÐ¼®±â(Multi-Collector Inductively Coupled Plasma Mass Spectrometer (MC-ICP-MS)) |
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Nu Instruments Ltd |
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Plasma 3 |
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À¯µµ °áÇÕ ÇöóÁ ºÐ±¤ºÐ¼®±â(Inductively Coupled Plasma-Optical Emission Spectrometry (ICP-OES)) |
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Thermo Scientific |
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iCAP 7400 |
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