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10049296 |
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ELS-7000 |
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Employing a large electron current and the maximum acceleration of 100kV, the electron beam of the minimum diameter of 1.8nm is kept stable for a long interval. Even with the resists commonly available on the market, patterns finer than 8nm can be exposed. Based on the achievements of the preceding model, the ELS-7700, the ELS-7000 realized both the long-interval fine electron beam stability and the high throughput. ELS-7000 is equipped with a highly rigid stage, which is based on our long experience in developing lithography systems. The 0.31nm beam positioning resolution is realized by utilizing the 18bit DAC. And, by employing a laser interferometer whose reading resolution is 0.6nm, both the stitching accuracy and overlaying accuracy have attained 40nm. ELS-7000 can expose fine patterns across a large area. Functions for exposing essential elementary graphic patterns are included in the standard specification. The optional circle pattern generator allows generating such patterns as circumferences and arcs. By attaching the fine-step field size modulation function, ELS-7000 can also be instrumental in creating WDM diffraction gratings. |
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054-279-0237 |
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best820@postech.ac.kr |
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¸¶½ºÅ©¸®½º ·¹ÀÌÀú ¸®¼Ò±×·¡ÇÇ(Maskless Laser Lithography, MLA150) |
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MLA150 |
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·¹ÀÌÀú ¸®¼Ò±×·¡ÇÇ ½Ã½ºÅÛ(Laser Lithography system) |
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Heidelberg Instruments |
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DWL-200 |
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±ØÀڿܼ± ûÁ¤ÀåÄ¡(Extreme Ultraviolet (EUV) Lithography) |
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Track |
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400,000/h |
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\ 2,147,483,647 |
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2007-02-23 |
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URL |
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| E-Beam, Developer, Coating, nm±Þ | |